Toshiba's 3D stacked structure boosts capacity, performance

Toshiba America Electronic Components, Inc. said it has introduced the new generation of BiCS FLASHâ„¢, a three-dimensional (3D) stacked cell structure flash memory.

The new device is a 256-gigabit (Gb) (32 gigabyte) 48-layer BiCS FLASH device and also deploys industry-leading 3-bit-per-cell TLC (triple-level cell) technology. Sample shipments will start in September.

BiCS FLASH is based on a leading-edge 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND flash memory, while enhancing write/erase reliability endurance and boosting write speeds. The new 256Gb device is suited for diverse applications, including consumer SSDs, smartphones, tablets, memory cards, and enterprise SSDs for data centers.

Toshiba has a long-standing commitment to flash memory, and is currently readying for mass production of BiCS FLASH in the new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 will be completed in the first half of 2016.

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. The company designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), solid state hybrid drives (SSHDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, advanced materials and medical tubes that make possible today´s leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.